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High-Performance Inorganically Connected CuInSe2 Nanocrystal Thin-Film Transistors and Integrated Circuits Based on the Solution Process of Colloidal Synthesis, Ligand Exchange, and Surface Treatment

  • Chao Pang*
    Chao Pang
    Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, Guangdong 510650, China
    *Email: [email protected]
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  • Shiben Hu
    Shiben Hu
    Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, Guangdong 510650, China
    More by Shiben Hu
  • Chan Guo
    Chan Guo
    Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, Guangdong 510650, China
    More by Chan Guo
  • Jiantai Wang
    Jiantai Wang
    Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, Guangdong 510650, China
    More by Jiantai Wang
  • Shenghan Zou
    Shenghan Zou
    Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, Guangdong 510650, China
    More by Shenghan Zou
  • Zhangxu Pan
    Zhangxu Pan
    Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, Guangdong 510650, China
    More by Zhangxu Pan
  • Jiucheng Liu
    Jiucheng Liu
    Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, Guangdong 510650, China
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  • Liming Shen
    Liming Shen
    State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing Tech University, Nanjing, Jiangsu 210009, China
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  • Ningzhong Bao*
    Ningzhong Bao
    State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing Tech University, Nanjing, Jiangsu 210009, China
    *Email: [email protected]
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  • Honglong Ning
    Honglong Ning
    Institute of Polymer Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong 510640, China
    More by Honglong Ning
  • Arunava Gupta*
    Arunava Gupta
    Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, Alabama 35487, United States
    *Email: [email protected]
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  • , and 
  • Zheng Gong*
    Zheng Gong
    Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, Guangdong 510650, China
    *Email: [email protected]
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Cite this: Chem. Mater. 2021, 33, 22, 8775–8785
Publication Date (Web):October 29, 2021
https://doi.org/10.1021/acs.chemmater.1c02877
Copyright © 2021 American Chemical Society

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    Abstract

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    Nanocrystal (NC) CuInSe2 thin-film transistors (TFTs), consisting of nontoxic and relatively abundant elements, have great potential in environment-friendly and low-cost electronic devices. However, the high-performance CuInSe2 NC TFTs reported so far utilize toxic compounds, such as CdSe and hydrazine, which often require tedious and complex procedures. TFTs using directly synthesized CuInSe2 NCs as channel layers exhibit promising device performances but are still not comparable to the counterparts of cadmium and lead chalcogenide-based NCs. In this work, an efficient solution-based colloidal synthesis and ligand-exchange process have been developed to effectively remove bulky surfactant ligands from CuInSe2 NCs and produce unique inorganically connected NCs through metal-sulfide bonding using simple metal-free chalcogenide compounds. Such inorganically connected CuInSe2 NC thin films, combined with surface treatment, substantially affect charge transport through trap states and tunneling transport mechanism. The carriers tunneling through the barrier between neighboring NCs with much shorter interparticle distances significantly enhance electronic coupling and improve the electrical transport properties. CuInSe2 NC TFT exhibits the electrical performance with a mobility of 9.6 cm2/(V s), on/off current ratio over 104, and negligible hysteresis at low operating voltages, comparable to those for state-of-the-art II–VI- and IV–VI-type NC TFTs. As a proof of concept, the CuInSe2 NC TFTs are used as building blocks of integrated inverters to demonstrate their promise for low process temperature-fabricated NC circuits.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.1c02877.

    • TEM image, XRD patterns, XPS spectra, ICP-OES analysis, UV–Vis spectra, AFM image, top-view SEM images, IDSVDS characteristics, dual-sweep IDSVGS characteristics, performance evolution of CuInSe2 NC TFTs, and list of publications describing the fabrication of cadmium and lead chalcogenide-based NC TFT devices (PDF)

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    Cited By

    This article is cited by 1 publications.

    1. Dhananjeya Kumaar, Matthias Can, Kevin Portner, Helena Weigand, Olesya Yarema, Simon Wintersteller, Florian Schenk, Darijan Boskovic, Nathan Pharizat, Robin Meinert, Evgeniia Gilshtein, Yaroslav Romanyuk, Artemios Karvounis, Rachel Grange, Alexandros Emboras, Vanessa Wood, Maksym Yarema. Colloidal Ternary Telluride Quantum Dots for Tunable Phase Change Optics in the Visible and Near-Infrared. ACS Nano 2023, 17 (7) , 6985-6997. https://doi.org/10.1021/acsnano.3c01187

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