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Electric Field Effect in Atomically Thin Carbon Films

Science
22 Oct 2004
Vol 306, Issue 5696
pp. 666-669

Abstract

We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 1013 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.

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Supplementary Material

File (novoselov.som.pdf)

References and Notes

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Other methods of preparing thin graphitic layers exist. The closest analogs of FLG are nanometer-sized patches of graphene on top of pyrolytic graphite (12, 13), carbon films grown on single-crystal metal substrates (14), and mesoscopic graphitic disks with thickness down to ∼60 graphene layers (8, 9).
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We believe that our thinnest FLG samples (as in Fig. 2A) are in fact zero-gap semiconductors, because small nonzero values of δϵ found experimentally can be attributed to inhomogeneous doping, which smears the zero-gap state over a small range of Vg and leads to finite apparent δϵ.
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Supported by the UK Engineering and Physical Sciences Research Council and the Russian Academy of Sciences (S.V.M., S.V.D.). We thank L. Eaves, E. Hill, and O. Shklyarevskii for discussions and interest.

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Published In

Science
Volume 306 | Issue 5696
22 October 2004

Submission history

Received: 19 July 2004
Accepted: 15 September 2004
Published in print: 22 October 2004

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Notes

Supporting Online Material
www.sciencemag.org/cgi/content/full/306/5696/666/DC1
Materials and Methods
SOM Text
Figs. S1 to S11
References and Notes

Authors

Affiliations

K. S. Novoselov
Department of Physics, University of Manchester, Manchester M13 9PL, UK.
A. K. Geim* [email protected]
Department of Physics, University of Manchester, Manchester M13 9PL, UK.
S. V. Morozov
Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
D. Jiang
Department of Physics, University of Manchester, Manchester M13 9PL, UK.
Y. Zhang
Department of Physics, University of Manchester, Manchester M13 9PL, UK.
S. V. Dubonos
Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
I. V. Grigorieva
Department of Physics, University of Manchester, Manchester M13 9PL, UK.
A. A. Firsov
Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.

Notes

*
To whom correspondence should be addressed. E-mail: [email protected]

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