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Carbon Nanotube Transistor Operation at 2.6 GHz

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Integrated Nanosystems Research Facility, Electrical Engineering and Computer Science, and Biomedical Engineering, University of California, Irvine, California 92697
Cite this: Nano Lett. 2004, 4, 4, 753–756
Publication Date (Web):March 23, 2004
https://doi.org/10.1021/nl0498740
Copyright © 2004 American Chemical Society
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    Abstract

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    We present the first demonstration of single-walled carbon nanotube transistor operation at microwave frequencies. To measure the source-drain ac current and voltage at microwave frequencies, we construct a resonant LC impedance-matching circuit at 2.6 GHz. Both semiconducting and metallic nanotubes are measured. Varying the back-gate voltage for a semiconducting nanotube at dc varies the 2.6-GHz source-drain impedance. In contrast, varying the back-gate voltage on a metallic nanotube at dc has no effect on the microwave source-drain impedance. We find the ac source-drain impedance to be different than the dc source-drain resistance, which may be due to the distributed nature of the capacitive and inductive impedance of the contacts to the nanotube.

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    †

     Electrical Engineering and Computer Science.

    ‡

     Biomedical Engineering.

    *

     Corresponding author. E-mail:  [email protected]. Phone:  949-824-9326. Fax:  949-824-3732.

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