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Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz

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† Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States
‡ Department of Materials Science and Engineering, University of Wisconsin—Madison, Madison, Wisconsin 53706, United States
§ Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States
∥ Carbonics Inc., Marina del Rey, California 90292, United States
*[email protected]
Cite this: ACS Nano 2016, 10, 7, 6782–6790
Publication Date (Web):June 21, 2016
https://doi.org/10.1021/acsnano.6b02395
Copyright © 2016 American Chemical Society
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    Abstract

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    In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding direct current (DC) performance with on-current density of 350 μA/μm, transconductance as high as 310 μS/μm, and superior current saturation with normalized output resistance greater than 100 kΩ·μm. These transistors create a record as carbon nanotube RF transistors that demonstrate both the current-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) greater than 70 GHz. Furthermore, these transistors exhibit good linearity performance with 1 dB gain compression point (P1dB) of 14 dBm and input third-order intercept point (IIP3) of 22 dBm. Our study advances state-of-the-art of carbon nanotube RF electronics, which have the potential to be made flexible and may find broad applications for signal amplification, wireless communication, and wearable/flexible electronics.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.6b02395.

    • Transfer curves of self-aligned T-shape gate nanotube radio frequency (RF) transistors under various drain-to-source biases, device de-embedding structure, intrinsic de-embedding structure, and de-embedding process for the two-tone test (PDF)

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