Mid-Infrared Lasing of Single Wurtzite InAs Nanowire
- Hisashi Sumikura*
Hisashi Sumikura*E-mail: [email protected]NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNanophotonics Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanMore by Hisashi Sumikura
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- Guoqiang Zhang
Guoqiang ZhangNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNanophotonics Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanMore by Guoqiang Zhang
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- Masato Takiguchi
Masato TakiguchiNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNanophotonics Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanMore by Masato Takiguchi
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- Naotomo Takemura
Naotomo TakemuraNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNanophotonics Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanMore by Naotomo Takemura
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- Akihiko Shinya
Akihiko ShinyaNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNanophotonics Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanMore by Akihiko Shinya
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- Hideki Gotoh
Hideki GotohNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanMore by Hideki Gotoh
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- Masaya Notomi
Masaya NotomiNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNanophotonics Center, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanMore by Masaya Notomi
Abstract
Mid-infrared (MIR) photonics is a developing technology for sensing materials by their characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR region, Si photonic structures have been fabricated to guide and confine MIR light, and they allow us to achieve sensitive and integrated sensing devices. However, since the implementation of MIR light sources on Si is still challenging, we propose a thick indium arsenide (InAs) nanowire as an MIR laser that can couple to Si photonic structures with material manipulation. In this study, thick InAs nanowires are grown on an indium phosphide substrate with a self-catalyst vapor–liquid–solid method and transferred to gold-deposited SiO2/Si substrates. Low-temperature microphotoluminescence (PL) spectroscopy shows that InAs nanowires exhibit broad PL peaking at a wavelength of around 2.6 μm (3850 cm–1 in frequency), which corresponds to the bandgap energy of wurtzite InAs. At high optical pump fluences, single InAs nanowire exhibits sharp emission peaks, while their integrated intensity and polarization degree increase abruptly at the threshold pump fluence. These nonlinear behaviors indicate that the MIR lasing action takes place in the InAs nanowire in its cavity mode. Our demonstration of the MIR nanowire laser expands the wavelength coverage and potential application of semiconductor nanowires.
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