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Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon

Cite this: ACS Nano 2018, 12, 3, 2169–2175
Publication Date (Web):January 24, 2018
https://doi.org/10.1021/acsnano.7b07911

Copyright © 2018 American Chemical Society. This publication is licensed under these Terms of Use.

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Abstract

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Additional functionalities on semiconductor microchips are progressively important in order to keep up with the ever-increasing demand for more powerful computational systems. Monolithic III–V integration on Si promises to merge mature Si CMOS processing technology with III–V semiconductors possessing superior material properties, e.g., in terms of carrier mobility or band structure (direct band gap). In particular, Si photonics would strongly benefit from an integration scheme for active III–V optoelectronic devices in order to enable low-cost and power-efficient electronic–photonic integrated circuits. We report on room-temperature lasing from AlGaAs/GaAs microdisk cavities monolithically integrated on Si(001) using a selective epitaxial growth technique called template-assisted selective epitaxy. The grown gain material possesses high optical quality without indication of threading dislocations, antiphase boundaries, or twin defects. The devices exhibit single-mode lasing at T < 250 K and lasing thresholds between 2 and 18 pJ/pulse depending on the cavity size (1–3 μm in diameter).

KEYWORDS:
We recently entered the zettabyte era; that is, the annual global Internet data traffic passed 1000 exabytes (1 billion terabytes). Until the year 2020 this number will even increase to 2.3 zettabytes every year, (1) however, at the expense of a drastically increased power consumption of integrated circuits (ICs). Moreover, since 2016, the semiconductor industry research plan is not centered on device scaling anymore, i.e., improving the chip performance followed by the application. Thus, the integration of additional, value-added functionalities on future silicon dies and reducing the power consumption at the same time will be key for upcoming strategies, which will start with the application defining the functionality of future Si-based chips. (2) This in turn will require the integration of a large variety of devices such as amplifiers, ultralow power switches, and especially optoelectronic devices on the very same Si substrate to benefit from the maturity and low cost of the CMOS technology platform. In particular, approaches including the usage of massless photons instead of electrons for the data transfer on- and off-chip promise higher speed at lower power consumption. (3,4) In order to shed light on Si chips and make such electronic–photonic integrated circuits (EPICs) a reality, high-performance waveguides, (5) modulators, (6) and photodetectors (7) in Si or group IV photonics have already been developed. However, the deleterious impact of threading dislocations introduced by the lattice mismatch between Si and III–V material has strongly complicated the realization of coherent on-chip laser sources being the last missing piece to enable fully integrated EPICs. In this context, the most obvious solution would be to use group IV materials, where Ge as well as its alloys with Sn plays a primary role, due to the possibility to turn them into direct band gap semiconductors and gain media. (8−10) Very recently, direct band gap Ge1–xSnx epilayers with x < 0.13 and optically pumped GeSn laser devices were demonstrated. (11,12) However, electrically pumped lasing at room temperature in direct band gap group IV semiconductors is still rather challenging. III–V electrically pumped lasers are well-established for telecommunication and other applications, but the large-scale integration of III–V laser diodes on a Si platform is hampered by various obstacles, although significant progress was achieved in heterogeneous and monolithic integration of III–V gain material on Si. (13−17) Since traditional heteroepitaxy typically suffers from large differences of the crystal lattices and thermal expansion—resulting in defective layers—several techniques were developed in order to suppress and/or confine the defective interface layer close to the substrate and ensure a nearly defect-free device layer. This includes the growth of thick buffer layers, (18−21) nanowires, (13,15) and/or masked substrates (22) that leads to a significantly reduced density of crystal defects and dislocations. A promising integration path was recently demonstrated using selective area growth in trenches (22) and in prepatterned V-grooves, (23) which resulted in an optically and electrically driven laser on Si(001), respectively. Another approach is based on bonding of ex-situ fabricated III–V photonic components, (16) which recently made significant progress regarding yield and device lifetime. (24)
In this paper, we present the monolithic integration of III–V semiconductors for photonic devices on Si, based on a selective epitaxial growth technique (template-assisted selective epitaxy, TASE) that had been successfully developed for nanoelectronic devices. (25−28) The basic concept relies on the idea of a single and small-area nucleation of the III–V material on Si—with any substrate orientation—within hollow SiO2 template structures of arbitrary shapes. This procedure allows for direct III–V heteroepitaxy on Si without typical defects such as threading dislocations or antiphase boundaries, avoiding the usage of thick buffer layers, and, thus, could enable large-scale optoelectronics integration. A necessity of adapting the TASE process to photonic devices, though, is to increase the dimensions of the templates and resulting III–V structures while maintaining the material quality. Here we report on optimized template designs, fabrication steps, and active materials compared to the nanoelectronics analogue (25,29) and demonstrate the integration of AlGaAs/GaAs microdisk structures as active photonic devices. Optically pumped lasing up to room temperature is achieved along with temperature-stable lasing threshold and lasing peak position.

Results and Discussion

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Laser Fabrication

In order to monolithically integrate III–V semiconductor gain material, we employ the TASE growth technique presented and discussed elsewhere. (25,26,30) This approach promises nearly defect-free heteroepitaxy of III–V material on Si substrates. As laser gain material GaAs with an AlGaAs cladding deposited by MOCVD is used. The fabrication steps of the GaAs/AlGaAs microdisk devices are illustrated in Figure 1. Standard Si(001) substrates are used and thermally oxidized (approximately 130 nm SiO2 oxide thickness) to provide a high refractive index mismatch between the GaAs (nGaAs = 3.6) and the surrounding medium (nSiO2 = 1.5), thus enabling a simulated cavity Q-factor of ∼730. Subsequently, holes (100 nm diameter) were etched through the oxide using a CHF3/O2 reactive ion etching (RIE) dry etch process as shown schematically in Figure 1a. Next, an etch stop layer of 2–3 nm Al2O3 as well as a sacrificial amorphous Si (α-Si) layer were deposited. A 5 × 5 μm2 mesa structure centered on top of the etched holes was patterned using e-beam lithography and an HBr/O2-based inductively coupled plasma (ICP) etch process (see Figure 1b). These squares were covered with SiO2 (which is called a template in the following) using atomic layer deposition (ALD, 20 nm) and plasma-enhanced chemical vapor deposition (PECVD, 120 nm), and four template openings are defined and etched into the oxide as indicated in Figure 1c and d. The size and shape of the openings ensure efficient precursor supply during growth while mechanically stabilizing the hollow oxide template. Afterward the sacrificial Si inside the templates and holes is etched (see Figure 1e) using XeF2. Prior to the metalorganic chemical vapor deposition (MOCVD) growth step (Figure 1f) the Al2O3 etch stop layer as well as the native SiO2 were etched using BHF while forming a hydrogen passivation on the Si surface. We grew two different samples for this study; both growth processes start with GaAs growth at 600 °C and a V–III ratio of 30 (sample A, 90 min; sample B, 30 min) using trimethylgallium (TMGa) and tert-butylarsine (TBAs) finalized with an AlGaAs/GaAs shell adding trimethylaluminum (TMAl). Whereas microdisk devices from sample B are approximately 1 μm in diameter, cavities from sample A are typically 3 times larger.

Figure 1

Figure 1. Fabrication of the GaAs microdisk laser. (a) Etching holes in a thermally oxidized Si(001) wafer using an RIE dry etching step. (b) Deposition and patterning of amorphous Si (α-Si). (c) Covering of the α-Si with ALD (20 nm) and PECVD (120 nm) SiO2. (d) Patterning and RIE etching of template openings. (e) Selective etching of the sacrificial α-Si layer using XeF2. (f) Finally, the hollow SiO2 cavities are filled using selective epitaxy (MOCVD).

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Morphological Analysis

In order to investigate the crystalline quality, orientation, and the seed area, we cut out several TEM lamellas from microdisk devices using Ga focused-ion beam (FIB) etching at accelerating voltages of 30 and 5 kV. The samples were investigated by scanning transmission electron microscopy (STEM) using a double spherical aberration corrected JEOL ARM200F operating at 200 kV and equipped with a JEOL Dry SD100GV silicon drift detector with 100 mm2 detection area for energy dispersive X-ray spectroscopy (EDX) analyses. The chemical maps obtained by EDX are presented in the Supporting Information, Figure S1, while annular dark field (ADF) images are shown in Figure 2. For those images, a convergence semiangle of 25 mrad was used in combination with an ADF detector with inner and outer collection semiangles of 90 and 370 mrad, respectively. Images obtained with an ADF are shown in Figure 2, while EDX images are presented in the Supporting Information, Figure S1.

Figure 2

Figure 2. (a) Cross-sectional ADF-STEM image of a microdisk from sample B. The insets display the fast Fourier transform images from the left and right segments as well as from the seed of the GaAs crystal. (b) Top-view scanning electron micrograph of the investigated device. (c) ADF-STEM micrograph along the [11–2] direction after high-frequency noise reduction using a Gaussian low-pass filter for noise reduction. (d) Ball-and-stick model of the GaAs crystal along the [11–2] direction.

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In Figure 2a a cross-sectional STEM of a microdisk from sample B is presented and a top-view scanning electron micrograph (SEM) of the same device is shown in Figure 2b. This is the device on which we carried out the optical characterization presented in Figures 4 and 5. The disk radius is approximately 1 μm, whereas its thickness and the oxide thickness underneath amount to ∼335 nm and ∼140 nm, respectively. Following the various processing and wet etching steps, the seed hole diameters are typically slightly extended and measure approximately 120 nm. The contrast gradient across (top to bottom) the GaAs region originates from a thickness variation from the sample preparation. Moreover, several Ga residues are visible as dark spots. The high-resolution ADF-STEM micrographs as well as their fast Fourier transform images (insets of Figure 2a) reveal identical crystal orientation throughout the entire III–V crystal, denoting monocrystalline growth without amorphous or polycrystalline segments. Moreover, we do not observe any crystal defects such as threading dislocations, antiphase boundaries, or planar defects for this laser device. For this study we investigated seven devices, and Figure S2 shows an example of a nonlasing device. For in-depth planar defect analysis of TASE-grown GaAs, we refer to our recent work. (31) The top-view SEM image (Figure 2b) shows well-defined facets. However, the entire crystal is tilted by 8° and rotated toward the (11–2) plane, as shown in Figure 2d, compared to the Si substrate. We believe that this unexpected tilt and rotation of the crystal might stem from a damaged Si surface from RIE overetching, as evidenced by the noticeable Si recess in the seed hole as well as the observation of defective crystals as shown in Figure S2.

Figure 3

Figure 3. (a, b) 3D FDTD and 2D mode simulations, respectively, indicating higher order modes (mode 120), a group index of 7.6, and a Q-factor of 1650. (c) Photoluminescence (PL) spectra of a 3 μm device measured at 80 K. The inset shows a schematic view of the optical excitation and light detection. (d) Light-in light-out curve as well as the fwhm as a function of excitation at 80 K. (e) Room-temperature PL spectra and light-in light-out curve (inset) of another device from sample A.

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Figure 4

Figure 4. Optical characteristics of MD lasers from sample B at (a) room temperature and 10 K (see inset). (b) Temperature-dependent light-in light-out curves. The temperature-dependent lasing threshold is shown in the inset.

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Figure 5

Figure 5. Temperature-dependent PL spectra (a) above the lasing threshold at 4.2 pJ per pulse and (b) below the lasing threshold at 1.3 pJ per pulse of a device from sample B. (c) PL peak position as a function of temperature following Varshni’s law.

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Optical Characterization of the GaAs/AlGaAs/GaAs Microdisk Lasers

The microdisk resonators were optically excited using a pulsed (15 ps pulse length every 10 ns) supercontinuum laser with center wavelengths of 705 and 710 nm close to the expected laser emission of the devices. The emission is collected from the top. A scheme of the measurement procedure is illustrated in the inset of Figure 3c. According to 3D finite difference time domain (FDTD) simulations of the cavity field decay using randomly oriented dipole emitters (see Supplementary Figure S4) and disk dimensions extracted from the TEM results, a clear mode profile is established, as presented in Figure 3a. The enhanced reflectivity of the high-order mode supported by the 3 μm nanodisk cavity (32) and the high refractive index mismatch between the GaAs nanodisk and the surrounding media results in a simulated cavity Q-factor of 1650. Additionally, 2D mode simulations using a commercial Helmholtz equation solver (Lumerical) show that a high-order (120) mode displayed in Figure 3b resembles the mode profile found with the FDTD simulation using the random-dipole method. Figure 3c shows photoluminescence (PL) spectra with a spectral resolution of ∼0.1 nm as a function of optical excitation at 80 K for a 3 μm microdisk device. Whereas the spontaneous emission dominating at low excitations is centered around 840 nm—being in good agreement with the low-temperature GaAs band gap—whispering gallery modes (WGM) appear above an excitation of 15 pJ per pulse. The integrated PL intensity as a function of excitation—light-in light-out (LL) curve—exhibits a clear kink along with a strong line width reduction at a lasing threshold of 18 pJ/pulse (see Figure 3d). Another device from sample A, shown in Figure 3e, exhibits lasing even up to room temperature with a similar lasing threshold. The corresponding LL curve features a typical S-shape behavior, which, accompanied by the strong line width narrowing, constitutes a clear signature of the room-temperature lasing operation of the device.
The temperature-dependent optical characterization of a microdisk laser device from sample B is presented in Figure 4. This monocrystalline device (cf. Figure 2) is 1 μm in diameter with a thickness of approximately 335 nm. The excitation-dependent room-temperature as well as low-temperature (10 K) PL spectra are displayed in Figure 4a and its inset, respectively. We found that the lasing thresholds of these smaller devices extracted from the LL curves (Figure 4b) are significantly lower (2.5–3.0 pJ/pulse) compared to the values observed for devices from sample A. Comparing the lasing thresholds measured for the 1 μm (2 pJ/pulse) and the 3 μm (18 pJ/pulse) microdisks we find a ∼9× higher lasing threshold for the large devices. As both devices are fabricated under the same growth conditions, we expect similar material qualities. Therefore, we conclude that either the different cavity confinement or simply the 9× larger gain volume of the 3 μm disk is responsible for the enhanced pumping energy required for the lasing operation of the larger device. The FDTD simulations presented in Figure S4 show that the cavity Q factor of the 1 μm disk (Q = 1430) and Q factor of the 3 μm disk (Q = 1650) are very similar. Since we optimized the laser spot size for the maximum photoluminescence intensity for each of the devices, we assume a constant excitation power per area for a given excitation laser power. Therefore, we believe that the 9× higher lasing threshold measured for the large device is mainly related to the scaling (9×) of the gain material volume, which is in excellent agreement with our experimental results. Remarkably, we observed that between 10 and 300 K the lasing peak position moves only very slightly from 830 to 836 nm (see Figure 5a), whereas the peak of the spontaneous emission follows Varshni’s law. Furthermore, we observe single-mode operation without any mode hopping up to 250 K and attribute the maximum shift of the lasing mode, ΔλT = 6 nm, to the temperature-induced refractive index change. (33) However, at room temperature, multimode lasing operation with a free spectral range (FSR) of 20 nm as shown in Figure 4a is observed. Additionally, as shown in the inset of Figure 4b, the lasing threshold is very insensitive to changes of the lattice temperature and increases only marginally from 2.5 pJ/pulse to 3.0 pJ/pulse for a temperature increase from 10 K to 300 K, corresponding to an extremely high characteristic temperature of T0 = 1500 K, which is more than 1 order of magnitude larger than for III–V quantum dot microdisk lasers. (33−35) We believe that due to the small diameter of the device and, thus, large FSR, only one (T < 250 K) or two modes (300 K) lie within the gain spectrum while providing sufficiently low cavity losses to enable lasing. As can be seen in Figure 5a, the spontaneous emission curve exhibits a very broad fwhm of ∼70 nm even at 10 K and shows a very strong high-energy tail that extends far beyond 800 nm. This slow decay of the high-energy tail cannot only be explained by thermal carrier activation, which corresponds to kBT = 0.86 meV (0.5 nm) at 10 K and, therefore, is a clear signature for an inequilibrium between the lattice temperature and the carrier temperature in the gain material caused by, for example, electron–electron collisions. However, as can be seen in Figure 5a, this strong spectral broadening of the material gain is very beneficial for the temperature stability of the device, as despite the Varshni shift and thermal depopulation, the overlap of the material gain and lasing cavity mode remains high if the temperature is increased.

Conclusion

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In summary, we demonstrated the monolithic integration of GaAs-based microdisk lasers on Si using template-assisted selective epitaxy. We developed a template process and design that enables the direct epitaxy of monocrystalline, μm-large III–V microdisks on Si(001) with high optical quality. The devices show unambiguous lasing action up to room temperature with thresholds between 2 and 18 pJ/pulse depending on the cavity size. Thus, TASE-grown gain materials and photonic devices on Si(001) represent a promising large-scale integration path toward electrically actuated lasers for merging electronics with photonics in order to reduce power consumption, i.e., via optical interconnects, and to enrich the functionality of future Si ICs.

Methods

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The AlGaAs/GaAs growth was conducted in a Veeco P150 MOCVD system at 60 Torr using H2 carrier gas, TMGa, TMAl, and TBAs as precursors. Prior to loading, the samples were etched in diluted hydrofluoric acid (HF) in order to remove the native oxide on the Si seed surface within the templates. Typical growth times were between 60 and 90 min. The dimensions of the AlGaAs/GaAs microdisks were measured after growth by inspection in a Hitachi SU8000 SEM. For the optical characterization of the microdisk lasers we used a home-built microphotoluminescence setup. The samples were excited using a pulsed supercontinuum light source with a repetition rate of 80 MHz and a typical pulse duration of 10 ps, which was filtered to a 5 nm spectral window around 720 nm. In order to reduce the degradation of the structures subject to the excitation light, we employed a chopper wheel to reduce the total number of excitation pulses by a factor of approximately 40. To avoid parasitic signals from the excitation source in the wavelength range of the microdisk emission between 800 and 900 nm, we used a 750 nm short-pass filter in the excitation path and a 750 nm long-pass filter in the detection path. The excitation light was focused onto the sample using a 50× Olympus objective, and the photoluminescence signal was collected with the same objective mounted inside a He-flow cryostat underneath a window opening, which provides optical access. The samples were glued onto the coldfinger, which can be moved in the x- and y-direction using a closed-loop piezo actuator stage. The objective can be moved in the z-direction using another piezo actuator to adjust the focus. The photoluminescence spectra of the microdisks were recorded using a liquid nitrogen cooled InGaAs line detector array with 1024 pixels mounted to a spectrometer with a focal length of 500 mm and an 850/mm grating. The photoluminescence signal is guided to the spectrometer and focused to the entrance slit with a width of ∼25 μm. An imaging system consisting of a halogen light source to illuminate the sample, a 20 cm lens to focus the image of the sample onto a CCD camera, a beam splitter to separate the two optical paths, and a semitransparent pellicle to add the imaging system to the excitation and detection paths was used to provide orientation on the sample and to record images of the microdisk emission using a 750 nm long-pass filter in front of the CCD. Samples for transmission electron microscopy were prepared by means of a dual-beam focused FEI Helios Nanolab 450S FIB. The samples were subsequently investigated by STEM using a double spherical aberration corrected JEOL ARM200F operating at 200 kV equipped with a JEOL Dry SD100GV silicon drift detector with 100 mm2 detection area for EDX analyses. ADF images were taken using a convergence semiangle of 25 mrad in combination with an ADF detector with inner and outer collection semiangles of 90 and 370 mrad, respectively.

Supporting Information

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.7b07911.

  • Additional information on TEM and EDX analyses as well as FDTD simulations (PDF)

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Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

Author Information

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  • Corresponding Author
  • Authors
    • Benedikt F. Mayer - IBM Research−Zürich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
    • Heinz Schmid - IBM Research−Zürich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland;  Orcidhttp://orcid.org/0000-0002-0228-4268
    • Marilyne Sousa - IBM Research−Zürich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
    • Johannes Gooth - IBM Research−Zürich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland;  Present Address: Max Planck Institute for the Chemical Physics of Solids, Noethnitzer Straße 40, 01187 Dresden, Germany;  Orcidhttp://orcid.org/0000-0002-4062-3232
    • Heike Riel - IBM Research−Zürich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
    • Kirsten E. Moselund - IBM Research−Zürich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland;  Email: [email protected]
  • Notes
    The authors declare no competing financial interest.

Acknowledgments

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The research leading to these results has received funding from the European Union’s Horizon 2020 Research and Innovation Program under Grant Agreement No. 704045 “MODES” (Marie Curie Post-Doctoral Research Fellowship), No. 641023 “NanoTandem”, and the ERC Starting Grant project under Grant Agreement No. 678567 “PLASMIC”. The authors would also like to thank Dr. M. D. Rossell from the Electron Microscopy Center (EMPA), Dübendorf, Switzerland, for fruitful discussions, S. Reidt for TEM lamella preparation, and M. Tschudy for his support.

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    Stange, D.; Wirths, S.; von den Driesch, N.; Mussler, G.; Stoica, T.; Ikonic, Z.; Hartmann, J. M.; Mantl, S.; Grützmacher, D.; Buca, D. Optical Transitions in Direct-Bandgap Ge1-x Snx Alloys. ACS Photonics 2015, 2, 1539– 1545,  DOI: 10.1021/acsphotonics.5b00372
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  10. 10
    Stange, D.; Wirths, S.; Geiger, R.; Schulte-Braucks, C.; Marzban, B.; von den Driesch, N.; Mussler, G.; Zabel, T.; Stoica, T.; Hartmann, J.-M.; Mantl, S.; Grützmacher, D.; Buca, D. Optically Pumped GeSn Microdisk Lasers on Si. ACS Photonics 2016, 3, 1279– 1285,  DOI: 10.1021/acsphotonics.6b00258
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    Optically Pumped GeSn Microdisk Lasers on Si
    Stange, Daniela; Wirths, Stephan; Geiger, Richard; Schulte-Braucks, Christian; Marzban, Bahareh; Driesch, Nils von den; Mussler, Gregor; Zabel, Thomas; Stoica, Toma; Hartmann, Jean-Michel; Mantl, Siegfried; Ikonic, Zoran; Gruetzmacher, Detlev; Sigg, Hans; Witzens, Jeremy; Buca, Dan
    ACS Photonics (2016), 3 (7), 1279-1285CODEN: APCHD5; ISSN:2330-4022. (American Chemical Society)
    The strong correlation between advancing the performance of Si microelectronics and their demand of low power consumption requires new ways of data communication. Photonic circuits on Si are already highly developed except for an eligible on-chip laser source integrated monolithically. The recent demonstration of an optically pumped waveguide laser made from the Si-congruent GeSn alloy, monolithical laser integration has taken a big step forward on the way to an all-inclusive nanophotonic platform in CMOS. We present group IV microdisk lasers with significant improvements in lasing temp. and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers. Lasing is obsd. up to 130 K with optical excitation d. threshold of 220 kW/cm2 at 50 K. Addnl. the influence of strain relaxation on the band structure of undercut resonators is discussed and allows the proof of laser emission for a just direct Ge0.915Sn0.085 alloy where Γ and L valleys have the same energies. Moreover, the obsd. cavity modes are identified and modeled.
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  11. 11
    Wirths, S.; Geiger, R.; von den Driesch, N.; Mussler, G.; Stoica, T.; Mantl, S.; Ikonic, Z.; Luysberg, M.; Chiussi, S.; Hartmann, J. M.; Sigg, H.; Faist, J.; Buca, D.; Grützmacher, D. Lasing in Direct-Bandgap GeSn Alloy Grown on Si. Nat. Photonics 2015, 9, 88– 92,  DOI: 10.1038/nphoton.2014.321
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    11
    Lasing in direct-bandgap GeSn alloy grown on Si
    Wirths, S.; Geiger, R.; von den Driesch, N.; Mussler, G.; Stoica, T.; Mantl, S.; Ikonic, Z.; Luysberg, M.; Chiussi, S.; Hartmann, J. M.; Sigg, H.; Faist, J.; Buca, D.; Gruetzmacher, D.
    Nature Photonics (2015), 9 (2), 88-92CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
    Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently, because Si and the chem. well-matched Ge are indirect-bandgap semiconductors. To overcome this drawback, several routes have been pursued, such as the all-optical Si Raman laser and the heterogeneous integration of direct-bandgap III-V lasers on Si. Here, we report lasing in a direct-bandgap group IV system created by alloying Ge with Sn without mech. introducing strain. Strong enhancement of photoluminescence emerging from the direct transition with decreasing temp. is the signature of a fundamental direct-bandgap semiconductor. For T ≤ 90 K, the observation of a threshold in emitted intensity with increasing incident optical power, together with strong linewidth narrowing and a consistent longitudinal cavity mode pattern, highlight unambiguous laser action. Direct-bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and complementary metal-oxide-semiconductor (CMOS) technol.
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  12. 12
    Al-Kabi, S.; Ghetmiri, S. A.; Margetis, J.; Pham, T.; Zhou, Y.; Dou, W.; Collier, B.; Quinde, R.; Du, W.; Mosleh, A.; Liu, J.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B.; Mortazavi, M.; Naseem, H. A.; Yu, S.-Q. An Optically Pumped 2.5 μm GeSn Laser on Si Operating at 110 K. Appl. Phys. Lett. 2016, 109, 171105,  DOI: 10.1063/1.4966141
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    12
    An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
    Al-Kabi, Sattar; Ghetmiri, Seyed Amir; Margetis, Joe; Pham, Thach; Zhou, Yiyin; Dou, Wei; Collier, Bria; Quinde, Randy; Du, Wei; Mosleh, Aboozar; Liu, Jifeng; Sun, Greg; Soref, Richard A.; Tolle, John; Li, Baohua; Mortazavi, Mansour; Naseem, Hameed A.; Yu, Shui-Qing
    Applied Physics Letters (2016), 109 (17), 171105/1-171105/4CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
    This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an industry std. chem. vapor deposition reactor using the low cost com. available precursors SnCl4 and GeH4 in a single run epitaxy process. Temp.-dependent characteristics of laser-output vs. pumping-laser-input showed lasing operation up to 110 K. The 10 K lasing threshold and wavelength were measured as 68 kW/cm2 and 2476 nm, resp. Lasing characteristic temp. (T0) was extd. as 65 K. (c) 2016 American Institute of Physics.
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  13. 13
    Mayer, B.; Janker, L.; Loitsch, B.; Treu, J.; Kostenbader, T.; Lichtmannecker, S.; Reichert, T.; Morkötter, S.; Kaniber, M.; Abstreiter, G.; Gies, C.; Koblmüller, G.; Finley, J. J. Monolithically Integrated High-β Nanowire Lasers on Silicon. Nano Lett. 2016, 16, 152– 156,  DOI: 10.1021/acs.nanolett.5b03404
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    13
    Monolithically Integrated High-β Nanowire Lasers on Silicon
    Mayer, B.; Janker, L.; Loitsch, B.; Treu, J.; Kostenbader, T.; Lichtmannecker, S.; Reichert, T.; Morkoetter, S.; Kaniber, M.; Abstreiter, G.; Gies, C.; Koblmueller, G.; Finley, J. J.
    Nano Letters (2016), 16 (1), 152-156CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)
    Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielec. interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temp. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Anal. of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.
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  14. 14
    Mayer, B.; Rudolph, D.; Schnell, J.; Morkötter, S.; Winnerl, J.; Treu, J.; Müller, K.; Bracher, G.; Abstreiter, G.; Koblmüller, G.; Finley, J. J. Lasing from Individual GaAs-AlGaAs Core-Shell Nanowires up to Room Temperature. Nat. Commun. 2013, 4, 2931,  DOI: 10.1038/ncomms3931
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    14
    Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature
    Mayer Benedikt; Rudolph Daniel; Schnell Joscha; Morkotter Stefanie; Winnerl Julia; Treu Julian; Muller Kai; Bracher Gregor; Abstreiter Gerhard; Koblmuller Gregor; Finley Jonathan J
    Nature communications (2013), 4 (), 2931 ISSN:.
    Semiconductor nanowires are widely considered to be the next frontier in the drive towards ultra-small, highly efficient coherent light sources. While NW lasers in the visible and ultraviolet have been widely demonstrated, the major role of surface and Auger recombination has hindered their development in the near infrared. Here we report infrared lasing up to room temperature from individual core-shell GaAs-AlGaAs nanowires. When subject to pulsed optical excitation, NWs exhibit lasing, characterized by single-mode emission at 10 K with a linewidth <60 GHz. The major role of non-radiative surface recombination is obviated by the presence of an AlGaAs shell around the GaAs-active region. Remarkably low threshold pump power densities down to ~760 W cm(-2) are observed at 10 K, with a characteristic temperature of T(0)=109±12 K and lasing operation up to room temperature. Our results show that, by carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors.
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  15. 15
    Saxena, D.; Mokkapati, S.; Parkinson, P.; Jiang, N.; Gao, Q.; Tan, H. H.; Jagadish, C. Optically Pumped Room-Temperature GaAs Nanowire Lasers. Nat. Photonics 2013, 7, 963– 968,  DOI: 10.1038/nphoton.2013.303
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    15
    Optically pumped room-temperature GaAs nanowire lasers
    Saxena, Dhruv; Mokkapati, Sudha; Parkinson, Patrick; Jiang, Nian; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati
    Nature Photonics (2013), 7 (12), 963-968CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
    Near-IR lasers are important for optical data communication, spectroscopy and medical diagnosis. Semiconductor nanowires offer the possibility of reducing the footprint of devices for three-dimensional device integration and hence are being extensively studied in the context of optoelectronic devices. Although visible and UV nanowire lasers have been demonstrated widely, progress towards room-temp. IR nanowire lasers has been limited because of material quality issues and Auger recombination. (Al)GaAs is an important material system for IR lasers that is extensively used for conventional lasers. GaAs has a very large surface recombination velocity, which is a serious issue for nanowire devices because of their large surface-to-vol. ratio. Here, we demonstrate room-temp. lasing in core-shell-cap GaAs/AlGaAs/GaAs nanowires by properly designing the Fabry-Perot cavity, optimizing the material quality and minimizing surface recombination. Our demonstration is a major step towards incorporating (Al)GaAs nanowire lasers into the design of nanoscale optoelectronic devices operating at near-IR wavelengths.
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  16. 16
    Hofrichter, J.; Morf, T.; Porta, A. La; Raz, O.; Dorren, H. J. S.; Offrein, B. J. A Single InP-on-SOI Microdisk for High-Speed Half-Duplex On-Chip Optical Links. Opt. Express 2012, 20, B365– B370,  DOI: 10.1364/OE.20.00B365
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    Liang, D.; Fiorentino, M.; Okumura, T.; Chang, H. H.; Spencer, D. T.; Kuo, Y. H.; Fang, A. W.; Dai, D.; Beausoleil, R. G.; Bowers, J. E. Electrically-Pumped Compact Hybrid Silicon Microring Lasers for Optical Interconnects. Opt. Express 2009, 17, 20355– 20364,  DOI: 10.1364/OE.17.020355
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    Luxmoore, I. J.; Toro, R.; Del Pozo-Zamudio, O.; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I. III-V Quantum Light Source and Cavity-QED on Silicon. Sci. Rep. 2013, 3, 1239,  DOI: 10.1038/srep01239
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    III-V quantum light source and cavity-QED on silicon
    Luxmoore, I. J.; Toro, R.; Del Pozo-Zamudio, O.; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.
    Scientific Reports (2013), 3 (), 1239, 5 pp.CODEN: SRCEC3; ISSN:2045-2322. (Nature Publishing Group)
    Non-classical light sources offer a myriad of possibilities in both fundamental science and com. applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturization of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.
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  19. 19
    Groenert, M. E.; Pitera, A. J.; Ram, R. J.; Fitzgerald, E. A. Improved Room-Temperature Continuous Wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs Lasers Fabricated on Si Substrates via Relaxed Graded GexSi1-x Buffer Layers. J. Vac. Sci. Technol., B: Microelectron. Process. Phenom. 2003, 21, 1064,  DOI: 10.1116/1.1576397
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    19
    Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1-x buffer layers
    Groenert, Michael E.; Pitera, Arthur J.; Ram, Rajeev J.; Fitzgerald, Eugene A.
    Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures--Processing, Measurement, and Phenomena (2003), 21 (3), 1064-1069CODEN: JVSTBM; ISSN:1071-1023. (American Institute of Physics)
    Improved GaAs/AlGaAs quantum well lasers were fabricated with longer lifetimes, higher efficiencies, and lower threshold current densities than previously reported devices on Ge/GeSi relaxed graded buffers on Si substrates. Uncoated broad-area lasers operated continuously at 858 nm with a differential quantum efficiency of 0.40 and a threshold c.d. of 269 A/cm2. Similar devices fabricated on GaAs substrates demonstrated nearly identical performance. Operating lifetimes on Si substrates were nearly 4 h, a 1 order of magnitude improvement over previous devices. Strained InGaAs quantum well lasers were operated continuously at room temp. on Ge/GeSi/Si substrates with a differential quantum efficiency of 0.26 and a threshold c.d. of 700 A/cm2. Electroluminescence analyses of the failure behavior of both types of devices suggested that recombination-enhanced defect reactions are limiting laser lifetime on Si substrates.
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  20. 20
    Shi, B.; Zhu, S.; Li, Q.; Wan, Y.; Hu, E. L.; Lau, K. M. Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon. ACS Photonics 2017, 4, 204– 210,  DOI: 10.1021/acsphotonics.6b00731
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    20
    Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon
    Shi, Bei; Zhu, Si; Li, Qiang; Wan, Yating; Hu, Evelyn L.; Lau, Kei May
    ACS Photonics (2017), 4 (2), 204-210CODEN: APCHD5; ISSN:2330-4022. (American Chemical Society)
    Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-scale optical interconnects within photonic integrated circuits on a silicon manufg. platform. III-V quantum dot (QD) lasers on silicon stand out for their better device performances and reliability. QD lasers grown on III-V substrates have been integrated by wafer-bonding techniques with high quality. Direct growth of QD lasers on silicon offers an alluring alternative, using widely available large-area silicon substrates. However, to date, notable achievements have been reported only in InAs/GaAs lasers emitting at 1.3 μm, while 1.55 μm InAs/InP QD lasers on silicon remain in uncharted territory. Here we demonstrate the first 1.55 μm band InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on (001) silicon substrates. The lasing threshold for the seven-layer quantum dot microdisk laser at liq.-helium temp. is 1.6 mW under continuous optical pumping. The obsd. lasing is attributed to a unique combination of the high-quality QDs, small mode vol., and smooth sidewall of the microdisk structure and a well-developed InP buffer incorporating quantum dots as dislocation filters. These results thus mark a major step toward an integrated III-V-on-silicon photonics platform.
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  21. 21
    Chen, S.; Li, W.; Wu, J.; Jiang, Q.; Tang, M.; Shutts, S.; Elliott, S. N.; Sobiesierski, A.; Seeds, A. J.; Ross, I.; Smowton, P. M.; Liu, H. Electrically Pumped Continuous-Wave III–V Quantum Dot Lasers on Silicon. Nat. Photonics 2016, 10, 307– 311,  DOI: 10.1038/nphoton.2016.21
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    Electrically pumped continuous-wave III-V quantum dot lasers on silicon
    Chen, Siming; Li, Wei; Wu, Jiang; Jiang, Qi; Tang, Mingchu; Shutts, Samuel; Elliott, Stella N.; Sobiesierski, Angela; Seeds, Alwyn J.; Ross, Ian; Smowton, Peter M.; Liu, Huiyun
    Nature Photonics (2016), 10 (5), 307-311CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
    Reliable, efficient elec. pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold c.d. of 62.5 A cm-2, a room-temp. output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low d. of threading dislocations on the order of 105 cm-2 in the III-V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic-electronic integration.
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  22. 22
    Wang, Z.; Tian, B.; Pantouvaki, M.; Guo, W.; Absil, P.; Van Campenhout, J.; Merckling, C.; Van Thourhout, D. Room-Temperature InP Distributed Feedback Laser Array Directly Grown on Silicon. Nat. Photonics 2015, 9, 837– 842,  DOI: 10.1038/nphoton.2015.199
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    Room-temperature InP distributed feedback laser array directly grown on silicon
    Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Guo, Weiming; Absil, Philippe; Van Campenhout, Joris; Merckling, Clement; Van Thourhout, Dries
    Nature Photonics (2015), 9 (12), 837-842CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
    Fully exploiting the silicon photonics platform for large-vol., cost-sensitive applications requires a fundamentally new approach to directly integrate high-performance laser sources using wafer-scale fabrication methods. Direct-bandgap III-V semiconductors allow efficient light generation, but the large mismatch in lattice const., thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Using a selective-area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback laser array monolithically grown on (001)-silicon operating at room temp. and suitable for wavelength-division-multiplexing applications. The novel epitaxial technol. suppresses threading dislocations and anti-phase boundaries to a less than 20-nm-thick layer, which does not affect device performance. Using an in-plane laser cavity defined using std. top-down lithog. patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with silicon photonic and electronic circuits.
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  23. 23
    Norman, J.; Kennedy, M. J.; Selvidge, J.; Li, Q.; Wan, Y.; Liu, A. Y.; Callahan, P. G.; Echlin, M. P.; Pollock, T. M.; Lau, K. M.; Gossard, A. C.; Bowers, J. E. Electrically Pumped Continuous Wave Quantum Dot Lasers Epitaxially Grown on Patterned, on-Axis (001) Si. Opt. Express 2017, 25, 3927,  DOI: 10.1364/OE.25.003927
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    There is no corresponding record for this reference.
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    Doussiere, P. Laser Integration on Silicon. In 2017 IEEE 14th International Conference on Group IV Photonics (GFP); IEEE, 2017; pp 169– 170.
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    Schmid, H.; Borg, M.; Moselund, K.; Gignac, L.; Breslin, C. M.; Bruley, J.; Cutaia, D.; Riel, H. Template-Assisted Selective Epitaxy of III–V Nanoscale Devices for Co-Planar Heterogeneous Integration with Si. Appl. Phys. Lett. 2015, 106, 233101,  DOI: 10.1063/1.4921962
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    25
    Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
    Schmid, H.; Borg, M.; Moselund, K.; Gignac, L.; Breslin, C. M.; Bruley, J.; Cutaia, D.; Riel, H.
    Applied Physics Letters (2015), 106 (23), 233101/1-233101/5CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
    III-V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal org. chem. vapor deposition. Single crystal III-V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures contg. constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithog. defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm2/V s, while the alongside fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at VDS = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si. (c) 2015 American Institute of Physics.
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    Borg, M.; Schmid, H.; Moselund, K. E.; Signorello, G.; Gignac, L.; Bruley, J.; Breslin, C.; Das Kanungo, P.; Werner, P.; Riel, H. Vertical III-V Nanowire Device Integration on Si(100). Nano Lett. 2014, 14, 1914– 1920,  DOI: 10.1021/nl404743j
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    Vertical III-V Nanowire Device Integration on Si(100)
    Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E.; Signorello, Giorgio; Gignac, Lynne; Bruley, John; Breslin, Chris; Das Kanungo, Pratyush; Werner, Peter; Riel, Heike
    Nano Letters (2014), 14 (4), 1914-1920CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)
    We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compd. semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallog. orientations, including nanocryst. Si. The nanowires investigated are epitaxially grown, single-cryst., free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temp., with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are elec. characterized. The results indicate a high uniformity and scalability in the fabrication process.
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    Czornomaz, L.; Uccelli, E.; Sousa, M.; Deshpande, V.; Djara, V.; Caimi, D.; Rossell, M. D.; Erni, R.; Fompeyrine, J. Confined Epitaxial Lateral Overgrowth (CELO): A Novel Concept for Scalable Integration of CMOS-Compatible InGaAs-on-Insulator MOSFETs on Large-Area Si Substrates. VLSI Technol. (VLSI Technol. 2015 Symp. 2015, xx, T172– T173,  DOI: 10.1109/VLSIT.2015.7223666
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    Figure 1

    Figure 1. Fabrication of the GaAs microdisk laser. (a) Etching holes in a thermally oxidized Si(001) wafer using an RIE dry etching step. (b) Deposition and patterning of amorphous Si (α-Si). (c) Covering of the α-Si with ALD (20 nm) and PECVD (120 nm) SiO2. (d) Patterning and RIE etching of template openings. (e) Selective etching of the sacrificial α-Si layer using XeF2. (f) Finally, the hollow SiO2 cavities are filled using selective epitaxy (MOCVD).

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    Figure 2

    Figure 2. (a) Cross-sectional ADF-STEM image of a microdisk from sample B. The insets display the fast Fourier transform images from the left and right segments as well as from the seed of the GaAs crystal. (b) Top-view scanning electron micrograph of the investigated device. (c) ADF-STEM micrograph along the [11–2] direction after high-frequency noise reduction using a Gaussian low-pass filter for noise reduction. (d) Ball-and-stick model of the GaAs crystal along the [11–2] direction.

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    Figure 3

    Figure 3. (a, b) 3D FDTD and 2D mode simulations, respectively, indicating higher order modes (mode 120), a group index of 7.6, and a Q-factor of 1650. (c) Photoluminescence (PL) spectra of a 3 μm device measured at 80 K. The inset shows a schematic view of the optical excitation and light detection. (d) Light-in light-out curve as well as the fwhm as a function of excitation at 80 K. (e) Room-temperature PL spectra and light-in light-out curve (inset) of another device from sample A.

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    Figure 4

    Figure 4. Optical characteristics of MD lasers from sample B at (a) room temperature and 10 K (see inset). (b) Temperature-dependent light-in light-out curves. The temperature-dependent lasing threshold is shown in the inset.

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    Figure 5

    Figure 5. Temperature-dependent PL spectra (a) above the lasing threshold at 4.2 pJ per pulse and (b) below the lasing threshold at 1.3 pJ per pulse of a device from sample B. (c) PL peak position as a function of temperature following Varshni’s law.

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    This article references 35 other publications.

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      The chips are down for Moore's law
      Waldrop, M. Mitchell
      Nature (London, United Kingdom) (2016), 530 (7589), 144-147CODEN: NATUAS; ISSN:0028-0836. (Nature Publishing Group)
      The semiconductor industry will soon abandon its pursuit of Moore's law. Now things could get a lot more interesting.
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      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XisVyktb0%253D&md5=bc0b381de6564490172c6faf5eb78d47
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      Green, W.; Assefa, S.; Rylyakov, A.; Schow, C.; Horst, F.; Vlasov, Y. CMOS Integrated Silicon Nanophotonics: An Enabling Technology for Exascale Computing. In Advanced Photonics; OSA: Washington, D.C., 2011; p IME1.
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      Masini, G.; Capellini, G.; Witzens, J.; Gunn, C. A 1550nm, 10Gbps Monolithic Optical Receiver in 130nm CMOS with Integrated Ge Waveguide Photodetector. In 2007 4th IEEE International Conference on Group IV Photonics; IEEE, 2007; pp 1– 3.
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      Xia, F.; Sekaric, L.; Vlasov, Y. Ultracompact Optical Buffers on a Silicon Chip. Nat. Photonics 2007, 1, 65– 71,  DOI: 10.1038/nphoton.2006.42
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      Ultracompact optical buffers on a silicon chip
      Xia, Fengnian; Sekaric, Lidija; Vlasov, Yurii
      Nature Photonics (2007), 1 (1), 65-71CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
      On-chip optical buffers based on waveguide delay lines might have significant implications for the development of optical interconnects in computer systems. Silicon-on-insulator (SOI) submicrometer photonic wire waveguides are used, because they can provide strong light confinement at the diffraction limit, allowing dramatic scaling of device size. Here we report on-chip optical delay lines based on such waveguides that consist of up to 100 microring resonators cascaded in either coupled-resonator or all-pass filter (APF) configurations. On-chip group delays exceeding 500 ps are demonstrated in a device with a footprint below 0.09 mm2. The trade-offs between resonantly enhanced group delay, device size, insertion loss and operational bandwidth are analyzed for various delay-line designs. A large fractional group delay exceeding 10 bits is achieved for bit rates as high as 20 Gbps. Measurements of system-level metrics as bit error rates for different bit rates demonstrate error-free operation up to 5 Gbps.
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      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXltVKhsb4%253D&md5=4d22bbf508adc8785e0a578153f31401
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      Xu, Q.; Schmidt, B.; Pradhan, S.; Lipson, M. Micrometre-Scale Silicon Electro-Optic Modulator. Nature 2005, 435, 325– 327,  DOI: 10.1038/nature03569
      6
      Micrometer-scale silicon electro-optic modulator
      Xu, Qianfan; Schmidt, Bradley; Pradhan, Sameer; Lipson, Michal
      Nature (London, United Kingdom) (2005), 435 (7040), 325-327CODEN: NATUAS; ISSN:0028-0836. (Nature Publishing Group)
      Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of Si low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small Si electrooptic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here the authors exptl. demonstrate a high-speed electrooptical modulator in compact Si structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the Si and also enables high-speed operation. The modulator is 12 μm in diam., 3 orders of magnitude smaller than previously demonstrated. Electrooptic modulators are 1 of the most crit. components in optoelectronic integration, and decreasing their size may enable novel chip architectures.
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      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXkt1Wkt7k%253D&md5=ccb9b9d5038a9eaf555be11494151ad4
    7. 7
      Assefa, S.; Xia, F.; Vlasov, Y. A. Reinventing Germanium Avalanche Photodetector for Nanophotonic on-Chip Optical Interconnects. Nature 2010, 464, 8813,  DOI: 10.1038/nature08813
      There is no corresponding record for this reference.
    8. 8
      Von den Driesch, N.; Stange, D.; Wirths, S.; Mussler, G.; Holländer, B.; Ikonic, Z.; Hartmann, J. M.; Stoica, T.; Mantl, S.; Grützmacher, D.; Buca, D. Direct Bandgap Group IV Epitaxy on Si for Laser Applications. Chem. Mater. 2015, 27, 4693– 4702,  DOI: 10.1021/acs.chemmater.5b01327
      8
      Direct Bandgap Group IV Epitaxy on Si for Laser Applications
      von den Driesch, N.; Stange, D.; Wirths, S.; Mussler, G.; Hollaender, B.; Ikonic, Z.; Hartmann, J. M.; Stoica, T.; Mantl, S.; Gruetzmacher, D.; Buca, D.
      Chemistry of Materials (2015), 27 (13), 4693-4702CODEN: CMATEX; ISSN:0897-4756. (American Chemical Society)
      The recent observation of a fundamental direct bandgap for GeSn Group IV alloys and the demonstration of low temp. lasing provide new perspectives on the fabrication of Si photonic circuits. This work addresses the progress in GeSn alloy epitaxy aiming at room temp. GeSn lasing. CVD of direct bandgap GeSn alloys with a high Γ- to L-valley energy sepn. and large thicknesses for efficient optical mode confinement is presented and discussed. Up to 1 μm thick GeSn layers with Sn contents ≤14 at.% were grown on thick relaxed Ge buffers, using Ge2H6 and SnCl4 precursors. Strong strain relaxation (≤81%) at 12.5 at.% Sn concn., translating into an increased sepn. between Γ- and L-valleys of ∼60 meV, were obtained without cryst. structure degrdn., as revealed by Rutherford backscattering spectroscopy/ion channeling and TEM. Room temp. reflectance and luminescence measurements were performed to probe the optical properties of these alloys. The emission/absorption limit of GeSn alloys can be extended up to 3.5 μm (0.35 eV), making those alloys ideal candidates for optoelectronics in the mid-IR region. Theor. net gain calcns. indicate that large room temp. laser gains should be reachable even without addnl. doping.
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    9. 9
      Stange, D.; Wirths, S.; von den Driesch, N.; Mussler, G.; Stoica, T.; Ikonic, Z.; Hartmann, J. M.; Mantl, S.; Grützmacher, D.; Buca, D. Optical Transitions in Direct-Bandgap Ge1-x Snx Alloys. ACS Photonics 2015, 2, 1539– 1545,  DOI: 10.1021/acsphotonics.5b00372
      There is no corresponding record for this reference.
    10. 10
      Stange, D.; Wirths, S.; Geiger, R.; Schulte-Braucks, C.; Marzban, B.; von den Driesch, N.; Mussler, G.; Zabel, T.; Stoica, T.; Hartmann, J.-M.; Mantl, S.; Grützmacher, D.; Buca, D. Optically Pumped GeSn Microdisk Lasers on Si. ACS Photonics 2016, 3, 1279– 1285,  DOI: 10.1021/acsphotonics.6b00258
      10
      Optically Pumped GeSn Microdisk Lasers on Si
      Stange, Daniela; Wirths, Stephan; Geiger, Richard; Schulte-Braucks, Christian; Marzban, Bahareh; Driesch, Nils von den; Mussler, Gregor; Zabel, Thomas; Stoica, Toma; Hartmann, Jean-Michel; Mantl, Siegfried; Ikonic, Zoran; Gruetzmacher, Detlev; Sigg, Hans; Witzens, Jeremy; Buca, Dan
      ACS Photonics (2016), 3 (7), 1279-1285CODEN: APCHD5; ISSN:2330-4022. (American Chemical Society)
      The strong correlation between advancing the performance of Si microelectronics and their demand of low power consumption requires new ways of data communication. Photonic circuits on Si are already highly developed except for an eligible on-chip laser source integrated monolithically. The recent demonstration of an optically pumped waveguide laser made from the Si-congruent GeSn alloy, monolithical laser integration has taken a big step forward on the way to an all-inclusive nanophotonic platform in CMOS. We present group IV microdisk lasers with significant improvements in lasing temp. and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers. Lasing is obsd. up to 130 K with optical excitation d. threshold of 220 kW/cm2 at 50 K. Addnl. the influence of strain relaxation on the band structure of undercut resonators is discussed and allows the proof of laser emission for a just direct Ge0.915Sn0.085 alloy where Γ and L valleys have the same energies. Moreover, the obsd. cavity modes are identified and modeled.
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    11. 11
      Wirths, S.; Geiger, R.; von den Driesch, N.; Mussler, G.; Stoica, T.; Mantl, S.; Ikonic, Z.; Luysberg, M.; Chiussi, S.; Hartmann, J. M.; Sigg, H.; Faist, J.; Buca, D.; Grützmacher, D. Lasing in Direct-Bandgap GeSn Alloy Grown on Si. Nat. Photonics 2015, 9, 88– 92,  DOI: 10.1038/nphoton.2014.321
      11
      Lasing in direct-bandgap GeSn alloy grown on Si
      Wirths, S.; Geiger, R.; von den Driesch, N.; Mussler, G.; Stoica, T.; Mantl, S.; Ikonic, Z.; Luysberg, M.; Chiussi, S.; Hartmann, J. M.; Sigg, H.; Faist, J.; Buca, D.; Gruetzmacher, D.
      Nature Photonics (2015), 9 (2), 88-92CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
      Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently, because Si and the chem. well-matched Ge are indirect-bandgap semiconductors. To overcome this drawback, several routes have been pursued, such as the all-optical Si Raman laser and the heterogeneous integration of direct-bandgap III-V lasers on Si. Here, we report lasing in a direct-bandgap group IV system created by alloying Ge with Sn without mech. introducing strain. Strong enhancement of photoluminescence emerging from the direct transition with decreasing temp. is the signature of a fundamental direct-bandgap semiconductor. For T ≤ 90 K, the observation of a threshold in emitted intensity with increasing incident optical power, together with strong linewidth narrowing and a consistent longitudinal cavity mode pattern, highlight unambiguous laser action. Direct-bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and complementary metal-oxide-semiconductor (CMOS) technol.
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    12. 12
      Al-Kabi, S.; Ghetmiri, S. A.; Margetis, J.; Pham, T.; Zhou, Y.; Dou, W.; Collier, B.; Quinde, R.; Du, W.; Mosleh, A.; Liu, J.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B.; Mortazavi, M.; Naseem, H. A.; Yu, S.-Q. An Optically Pumped 2.5 μm GeSn Laser on Si Operating at 110 K. Appl. Phys. Lett. 2016, 109, 171105,  DOI: 10.1063/1.4966141
      12
      An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
      Al-Kabi, Sattar; Ghetmiri, Seyed Amir; Margetis, Joe; Pham, Thach; Zhou, Yiyin; Dou, Wei; Collier, Bria; Quinde, Randy; Du, Wei; Mosleh, Aboozar; Liu, Jifeng; Sun, Greg; Soref, Richard A.; Tolle, John; Li, Baohua; Mortazavi, Mansour; Naseem, Hameed A.; Yu, Shui-Qing
      Applied Physics Letters (2016), 109 (17), 171105/1-171105/4CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
      This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an industry std. chem. vapor deposition reactor using the low cost com. available precursors SnCl4 and GeH4 in a single run epitaxy process. Temp.-dependent characteristics of laser-output vs. pumping-laser-input showed lasing operation up to 110 K. The 10 K lasing threshold and wavelength were measured as 68 kW/cm2 and 2476 nm, resp. Lasing characteristic temp. (T0) was extd. as 65 K. (c) 2016 American Institute of Physics.
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    13. 13
      Mayer, B.; Janker, L.; Loitsch, B.; Treu, J.; Kostenbader, T.; Lichtmannecker, S.; Reichert, T.; Morkötter, S.; Kaniber, M.; Abstreiter, G.; Gies, C.; Koblmüller, G.; Finley, J. J. Monolithically Integrated High-β Nanowire Lasers on Silicon. Nano Lett. 2016, 16, 152– 156,  DOI: 10.1021/acs.nanolett.5b03404
      13
      Monolithically Integrated High-β Nanowire Lasers on Silicon
      Mayer, B.; Janker, L.; Loitsch, B.; Treu, J.; Kostenbader, T.; Lichtmannecker, S.; Reichert, T.; Morkoetter, S.; Kaniber, M.; Abstreiter, G.; Gies, C.; Koblmueller, G.; Finley, J. J.
      Nano Letters (2016), 16 (1), 152-156CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)
      Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielec. interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temp. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Anal. of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.
      >> More from SciFinder ®
      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhvFWrtr%252FN&md5=9a878827e1b3f2c4c2d4c40e15b24b09
    14. 14
      Mayer, B.; Rudolph, D.; Schnell, J.; Morkötter, S.; Winnerl, J.; Treu, J.; Müller, K.; Bracher, G.; Abstreiter, G.; Koblmüller, G.; Finley, J. J. Lasing from Individual GaAs-AlGaAs Core-Shell Nanowires up to Room Temperature. Nat. Commun. 2013, 4, 2931,  DOI: 10.1038/ncomms3931
      14
      Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature
      Mayer Benedikt; Rudolph Daniel; Schnell Joscha; Morkotter Stefanie; Winnerl Julia; Treu Julian; Muller Kai; Bracher Gregor; Abstreiter Gerhard; Koblmuller Gregor; Finley Jonathan J
      Nature communications (2013), 4 (), 2931 ISSN:.
      Semiconductor nanowires are widely considered to be the next frontier in the drive towards ultra-small, highly efficient coherent light sources. While NW lasers in the visible and ultraviolet have been widely demonstrated, the major role of surface and Auger recombination has hindered their development in the near infrared. Here we report infrared lasing up to room temperature from individual core-shell GaAs-AlGaAs nanowires. When subject to pulsed optical excitation, NWs exhibit lasing, characterized by single-mode emission at 10 K with a linewidth <60 GHz. The major role of non-radiative surface recombination is obviated by the presence of an AlGaAs shell around the GaAs-active region. Remarkably low threshold pump power densities down to ~760 W cm(-2) are observed at 10 K, with a characteristic temperature of T(0)=109±12 K and lasing operation up to room temperature. Our results show that, by carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors.
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    15. 15
      Saxena, D.; Mokkapati, S.; Parkinson, P.; Jiang, N.; Gao, Q.; Tan, H. H.; Jagadish, C. Optically Pumped Room-Temperature GaAs Nanowire Lasers. Nat. Photonics 2013, 7, 963– 968,  DOI: 10.1038/nphoton.2013.303
      15
      Optically pumped room-temperature GaAs nanowire lasers
      Saxena, Dhruv; Mokkapati, Sudha; Parkinson, Patrick; Jiang, Nian; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati
      Nature Photonics (2013), 7 (12), 963-968CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
      Near-IR lasers are important for optical data communication, spectroscopy and medical diagnosis. Semiconductor nanowires offer the possibility of reducing the footprint of devices for three-dimensional device integration and hence are being extensively studied in the context of optoelectronic devices. Although visible and UV nanowire lasers have been demonstrated widely, progress towards room-temp. IR nanowire lasers has been limited because of material quality issues and Auger recombination. (Al)GaAs is an important material system for IR lasers that is extensively used for conventional lasers. GaAs has a very large surface recombination velocity, which is a serious issue for nanowire devices because of their large surface-to-vol. ratio. Here, we demonstrate room-temp. lasing in core-shell-cap GaAs/AlGaAs/GaAs nanowires by properly designing the Fabry-Perot cavity, optimizing the material quality and minimizing surface recombination. Our demonstration is a major step towards incorporating (Al)GaAs nanowire lasers into the design of nanoscale optoelectronic devices operating at near-IR wavelengths.
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    16. 16
      Hofrichter, J.; Morf, T.; Porta, A. La; Raz, O.; Dorren, H. J. S.; Offrein, B. J. A Single InP-on-SOI Microdisk for High-Speed Half-Duplex On-Chip Optical Links. Opt. Express 2012, 20, B365– B370,  DOI: 10.1364/OE.20.00B365
      There is no corresponding record for this reference.
    17. 17
      Liang, D.; Fiorentino, M.; Okumura, T.; Chang, H. H.; Spencer, D. T.; Kuo, Y. H.; Fang, A. W.; Dai, D.; Beausoleil, R. G.; Bowers, J. E. Electrically-Pumped Compact Hybrid Silicon Microring Lasers for Optical Interconnects. Opt. Express 2009, 17, 20355– 20364,  DOI: 10.1364/OE.17.020355
      There is no corresponding record for this reference.
    18. 18
      Luxmoore, I. J.; Toro, R.; Del Pozo-Zamudio, O.; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I. III-V Quantum Light Source and Cavity-QED on Silicon. Sci. Rep. 2013, 3, 1239,  DOI: 10.1038/srep01239
      18
      III-V quantum light source and cavity-QED on silicon
      Luxmoore, I. J.; Toro, R.; Del Pozo-Zamudio, O.; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.
      Scientific Reports (2013), 3 (), 1239, 5 pp.CODEN: SRCEC3; ISSN:2045-2322. (Nature Publishing Group)
      Non-classical light sources offer a myriad of possibilities in both fundamental science and com. applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturization of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.
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    19. 19
      Groenert, M. E.; Pitera, A. J.; Ram, R. J.; Fitzgerald, E. A. Improved Room-Temperature Continuous Wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs Lasers Fabricated on Si Substrates via Relaxed Graded GexSi1-x Buffer Layers. J. Vac. Sci. Technol., B: Microelectron. Process. Phenom. 2003, 21, 1064,  DOI: 10.1116/1.1576397
      19
      Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1-x buffer layers
      Groenert, Michael E.; Pitera, Arthur J.; Ram, Rajeev J.; Fitzgerald, Eugene A.
      Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures--Processing, Measurement, and Phenomena (2003), 21 (3), 1064-1069CODEN: JVSTBM; ISSN:1071-1023. (American Institute of Physics)
      Improved GaAs/AlGaAs quantum well lasers were fabricated with longer lifetimes, higher efficiencies, and lower threshold current densities than previously reported devices on Ge/GeSi relaxed graded buffers on Si substrates. Uncoated broad-area lasers operated continuously at 858 nm with a differential quantum efficiency of 0.40 and a threshold c.d. of 269 A/cm2. Similar devices fabricated on GaAs substrates demonstrated nearly identical performance. Operating lifetimes on Si substrates were nearly 4 h, a 1 order of magnitude improvement over previous devices. Strained InGaAs quantum well lasers were operated continuously at room temp. on Ge/GeSi/Si substrates with a differential quantum efficiency of 0.26 and a threshold c.d. of 700 A/cm2. Electroluminescence analyses of the failure behavior of both types of devices suggested that recombination-enhanced defect reactions are limiting laser lifetime on Si substrates.
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    20. 20
      Shi, B.; Zhu, S.; Li, Q.; Wan, Y.; Hu, E. L.; Lau, K. M. Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon. ACS Photonics 2017, 4, 204– 210,  DOI: 10.1021/acsphotonics.6b00731
      20
      Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon
      Shi, Bei; Zhu, Si; Li, Qiang; Wan, Yating; Hu, Evelyn L.; Lau, Kei May
      ACS Photonics (2017), 4 (2), 204-210CODEN: APCHD5; ISSN:2330-4022. (American Chemical Society)
      Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-scale optical interconnects within photonic integrated circuits on a silicon manufg. platform. III-V quantum dot (QD) lasers on silicon stand out for their better device performances and reliability. QD lasers grown on III-V substrates have been integrated by wafer-bonding techniques with high quality. Direct growth of QD lasers on silicon offers an alluring alternative, using widely available large-area silicon substrates. However, to date, notable achievements have been reported only in InAs/GaAs lasers emitting at 1.3 μm, while 1.55 μm InAs/InP QD lasers on silicon remain in uncharted territory. Here we demonstrate the first 1.55 μm band InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on (001) silicon substrates. The lasing threshold for the seven-layer quantum dot microdisk laser at liq.-helium temp. is 1.6 mW under continuous optical pumping. The obsd. lasing is attributed to a unique combination of the high-quality QDs, small mode vol., and smooth sidewall of the microdisk structure and a well-developed InP buffer incorporating quantum dots as dislocation filters. These results thus mark a major step toward an integrated III-V-on-silicon photonics platform.
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      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2sXlt1Khsg%253D%253D&md5=d679e1194b3d443e1668a87d1ada5078
    21. 21
      Chen, S.; Li, W.; Wu, J.; Jiang, Q.; Tang, M.; Shutts, S.; Elliott, S. N.; Sobiesierski, A.; Seeds, A. J.; Ross, I.; Smowton, P. M.; Liu, H. Electrically Pumped Continuous-Wave III–V Quantum Dot Lasers on Silicon. Nat. Photonics 2016, 10, 307– 311,  DOI: 10.1038/nphoton.2016.21
      21
      Electrically pumped continuous-wave III-V quantum dot lasers on silicon
      Chen, Siming; Li, Wei; Wu, Jiang; Jiang, Qi; Tang, Mingchu; Shutts, Samuel; Elliott, Stella N.; Sobiesierski, Angela; Seeds, Alwyn J.; Ross, Ian; Smowton, Peter M.; Liu, Huiyun
      Nature Photonics (2016), 10 (5), 307-311CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
      Reliable, efficient elec. pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold c.d. of 62.5 A cm-2, a room-temp. output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low d. of threading dislocations on the order of 105 cm-2 in the III-V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic-electronic integration.
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      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XjslGqtrY%253D&md5=eca906b85cd1ddfcec1ce51c31fd6138
    22. 22
      Wang, Z.; Tian, B.; Pantouvaki, M.; Guo, W.; Absil, P.; Van Campenhout, J.; Merckling, C.; Van Thourhout, D. Room-Temperature InP Distributed Feedback Laser Array Directly Grown on Silicon. Nat. Photonics 2015, 9, 837– 842,  DOI: 10.1038/nphoton.2015.199
      22
      Room-temperature InP distributed feedback laser array directly grown on silicon
      Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Guo, Weiming; Absil, Philippe; Van Campenhout, Joris; Merckling, Clement; Van Thourhout, Dries
      Nature Photonics (2015), 9 (12), 837-842CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
      Fully exploiting the silicon photonics platform for large-vol., cost-sensitive applications requires a fundamentally new approach to directly integrate high-performance laser sources using wafer-scale fabrication methods. Direct-bandgap III-V semiconductors allow efficient light generation, but the large mismatch in lattice const., thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Using a selective-area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback laser array monolithically grown on (001)-silicon operating at room temp. and suitable for wavelength-division-multiplexing applications. The novel epitaxial technol. suppresses threading dislocations and anti-phase boundaries to a less than 20-nm-thick layer, which does not affect device performance. Using an in-plane laser cavity defined using std. top-down lithog. patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with silicon photonic and electronic circuits.
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      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhslantL3M&md5=57619a8d661c1e7a26bfedd206a3e68b
    23. 23
      Norman, J.; Kennedy, M. J.; Selvidge, J.; Li, Q.; Wan, Y.; Liu, A. Y.; Callahan, P. G.; Echlin, M. P.; Pollock, T. M.; Lau, K. M.; Gossard, A. C.; Bowers, J. E. Electrically Pumped Continuous Wave Quantum Dot Lasers Epitaxially Grown on Patterned, on-Axis (001) Si. Opt. Express 2017, 25, 3927,  DOI: 10.1364/OE.25.003927
      There is no corresponding record for this reference.
    24. 24
      Doussiere, P. Laser Integration on Silicon. In 2017 IEEE 14th International Conference on Group IV Photonics (GFP); IEEE, 2017; pp 169– 170.
      There is no corresponding record for this reference.
    25. 25
      Schmid, H.; Borg, M.; Moselund, K.; Gignac, L.; Breslin, C. M.; Bruley, J.; Cutaia, D.; Riel, H. Template-Assisted Selective Epitaxy of III–V Nanoscale Devices for Co-Planar Heterogeneous Integration with Si. Appl. Phys. Lett. 2015, 106, 233101,  DOI: 10.1063/1.4921962
      25
      Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
      Schmid, H.; Borg, M.; Moselund, K.; Gignac, L.; Breslin, C. M.; Bruley, J.; Cutaia, D.; Riel, H.
      Applied Physics Letters (2015), 106 (23), 233101/1-233101/5CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
      III-V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal org. chem. vapor deposition. Single crystal III-V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures contg. constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithog. defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm2/V s, while the alongside fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at VDS = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si. (c) 2015 American Institute of Physics.
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      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhtVartr3N&md5=b0a46ec8bdfcc52865b39435f92d9ee8
    26. 26
      Borg, M.; Schmid, H.; Moselund, K. E.; Signorello, G.; Gignac, L.; Bruley, J.; Breslin, C.; Das Kanungo, P.; Werner, P.; Riel, H. Vertical III-V Nanowire Device Integration on Si(100). Nano Lett. 2014, 14, 1914– 1920,  DOI: 10.1021/nl404743j
      26
      Vertical III-V Nanowire Device Integration on Si(100)
      Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E.; Signorello, Giorgio; Gignac, Lynne; Bruley, John; Breslin, Chris; Das Kanungo, Pratyush; Werner, Peter; Riel, Heike
      Nano Letters (2014), 14 (4), 1914-1920CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)
      We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compd. semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallog. orientations, including nanocryst. Si. The nanowires investigated are epitaxially grown, single-cryst., free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temp., with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are elec. characterized. The results indicate a high uniformity and scalability in the fabrication process.
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      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXktlels78%253D&md5=6cefa3b7cc713e0f83b383863c55d3b7
    27. 27
      Czornomaz, L.; Uccelli, E.; Sousa, M.; Deshpande, V.; Djara, V.; Caimi, D.; Rossell, M. D.; Erni, R.; Fompeyrine, J. Confined Epitaxial Lateral Overgrowth (CELO): A Novel Concept for Scalable Integration of CMOS-Compatible InGaAs-on-Insulator MOSFETs on Large-Area Si Substrates. VLSI Technol. (VLSI Technol. 2015 Symp. 2015, xx, T172– T173,  DOI: 10.1109/VLSIT.2015.7223666
      There is no corresponding record for this reference.
    28. 28
      Borg, M.; Schmid, H.; Moselund, K. E.; Cutaia, D.; Riel, H. Mechanisms of Template-Assisted Selective Epitaxy of InAs Nanowires on Si. J. Appl. Phys. 2015, 117, 144303,  DOI: 10.1063/1.4916984
      28
      Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si
      Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E.; Cutaia, Davide; Riel, Heike
      Journal of Applied Physics (Melville, NY, United States) (2015), 117 (14), 144303/1-144303/7CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)
      A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diam. (20-140 nm), growth time (0-30 min), growth temp. (520-580°C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. The effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphol. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by Knudsen diffusion in the vapor, but an addnl. contribution of In surface diffusion reduces the V/III ratio. The results reveal the interplay of growth parameters, crystal facets and template geometry and thus are generally applicable for nanoscale selective epitaxy. (c) 2015 American Institute of Physics.
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    29. 29
      Cutaia, D.; Moselund, K. E.; Schmid, H.; Borg, M.; Olziersky, A.; Riel, H. Complementary III–V Heterojunction Lateral NW Tunnel FET Technology on Si. In 2016 IEEE Symposium on VLSI Technology; IEEE, 2016; Vol. xx, pp 1– 2.
      There is no corresponding record for this reference.
    30. 30
      Schmid, H.; Cutaia, D.; Gooth, J.; Wirths, S.; Bologna, N.; Moselund, K. E.; Riel, H. Monolithic Integration of Multiple III-V Semiconductors on Si for MOSFETs and TFETs. In 2016 IEEE International Electron Devices Meeting (IEDM); IEEE, 2016; pp 3.6.1– 3.6.4.
      There is no corresponding record for this reference.
    31. 31
      Knoedler, M.; Bologna, N.; Schmid, H.; Borg, M.; Moselund, K. E.; Wirths, S.; Rossell, M. D.; Riel, H. Observation of Twin-Free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy. Cryst. Growth Des. 2017, 17, 6297– 6302,  DOI: 10.1021/acs.cgd.7b00983
      31
      Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy
      Knoedler, Moritz; Bologna, Nicolas; Schmid, Heinz; Borg, Mattias; Moselund, Kirsten E.; Wirths, Stephan; Rossell, Marta D.; Riel, Heike
      Crystal Growth & Design (2017), 17 (12), 6297-6302CODEN: CGDEFU; ISSN:1528-7483. (American Chemical Society)
      We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temps. using metal-org. chem. vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high d. planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.
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    32. 32
      Chen, R.; Tran, T.-T. D.; Ng, K. W.; Ko, W. S.; Chuang, L. C.; Sedgwick, F. G.; Chang-Hasnain, C. Nanolasers Grown on Silicon. Nat. Photonics 2011, 5, 170– 175,  DOI: 10.1038/nphoton.2010.315
      32
      Nanolasers grown on silicon
      Chen, Roger; Tran, Thai-Truong D.; Ng, Kar Wei; Ko, Wai Son; Chuang, Linus C.; Sedgwick, Forrest G.; Chang-Hasnain, Connie
      Nature Photonics (2011), 5 (3), 170-175CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
      The integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, until now, material lattice mismatch and incompatible growth temps. have fundamentally limited monolithic integration of lasers onto silicon substrates. Here, we use a novel growth scheme to overcome this roadblock and directly grow on-chip InGaAs nanopillar lasers, demonstrating the potency of bottom-up nano-optoelectronic integration. Unique helically propagating cavity modes are used to strongly confine light within subwavelength nanopillars despite the low refractive index contrast between InGaAs and silicon. These modes therefore provide an avenue for engineering on-chip nanophotonic devices such as lasers. Nanopillar lasers are as-grown on silicon, offer tiny footprints and scalability, and are thus particularly suited to high-d. optoelectronics. They may ultimately form the basis of future monolithic light sources needed to bridge the existing gap between photonic and electronic circuits.
      >> More from SciFinder ®
      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3MXisFWqsrc%253D&md5=cbe325806c5f9b12d65c13f8c5251940
    33. 33
      Shi, B.; Zhu, S.; Li, Q.; Tang, C. W.; Wan, Y.; Hu, E. L.; Lau, K. M. 1.55 μm Room-Temperature Lasing from Subwavelength Quantum-Dot Microdisks Directly Grown on (001) Si. Appl. Phys. Lett. 2017, 110, 121109,  DOI: 10.1063/1.4979120
      33
      1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si
      Shi, Bei; Zhu, Si; Li, Qiang; Tang, Chak Wah; Wan, Yating; Hu, Evelyn L.; Lau, Kei May
      Applied Physics Letters (2017), 110 (12), 121109/1-121109/5CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
      Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biol. sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-vol., low-cost silicon-based manufg. foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temp. stability. Here, we demonstrate room-temp. InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers. (c) 2017 American Institute of Physics.
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      https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2sXkslOlsb0%253D&md5=0064ecf9dfcefbec542ce2034ce5f8de
    34. 34
      Wan, Y.; Li, Q.; Liu, A. Y.; Gossard, A. C.; Bowers, J. E.; Hu, E. L.; Lau, K. M. Temperature Characteristics of Epitaxially Grown InAs Quantum Dot Micro-Disk Lasers on Silicon for on-Chip Light Sources. Appl. Phys. Lett. 2016, 109, 11104,  DOI: 10.1063/1.4955456
      There is no corresponding record for this reference.
    35. 35
      Ide, T.; Baba, T.; Tatebayashi, J.; Iwamoto, S.; Nakaoka, T.; Arakawa, Y. Room Temperature Continuous Wave Lasing in InAs Quantum-Dot Microdisks with Air Cladding. Opt. Express 2005, 13, 1615– 1620,  DOI: 10.1364/OPEX.13.001615
      There is no corresponding record for this reference.

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