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A SHORT REVIEW ON DEEP-SUB-VOLTAGE NANOELECTRONICS AND RELATED TECHNOLOGIES

Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow Region 142432, Russia

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ALEXANDRA ANDREEVA

Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow Region 142432, Russia

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https://doi.org/10.1142/S0219581X09006328Cited by:6 (Source: Crossref)

Abstract

The decrease of energy consumption per 1 bit processing (ε) and power supply voltage (V_dd) of integrated circuits (ICs) are long-term tendencies in micro- and nanoelectronics. In this framework, deep-sub-voltage nanoelectronics (DSVN), i.e., ICs of ~10¹¹–10¹² cm^-2 component densities operating near the theoretical limit of ε, is sure to find application in the next 10 years. In nanoelectronics, the demand on high-capacity capacitors of micron sizes sharply increases with a decrease of technological norms, ε and V_dd. Creation of high-capacity capacitors of micron size to meet the challenge of DSVN and related technologies is considered. The necessity of developing all-solid-state impulse micron-sized supercapacitors on the basis of advanced superionic conductors (nanoionic supercapacitors) is discussed. Theoretical estimates and experimental data on prototype nanoionic supercapacitors with capacity density δ_C ≈ 100 μF/cm² are presented. Future perspectives of nanoionic devices are briefly discussed.

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A SHORT REVIEW ON DEEP-SUB-VOLTAGE NANOELECTRONICS AND RELATED TECHNOLOGIES

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A SHORT REVIEW ON DEEP-SUB-VOLTAGE NANOELECTRONICS AND RELATED TECHNOLOGIES

Abstract

References

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