The preparation of good transmission electron microscopy specimens with minimum milling damage can be very complicated, especially from a specific area in a sample. Therefore, a novel approach for transmission electron microscopy specimen preparation using a focused ion beam system is proposed, based on the use of low energy (5 kV)Ga ions and a low incident ion angle (approximately 1 degree ) from a thickness of approximately 500 nm until the sample is electron transparent. Transmission electron microscopy specimens prepared by this method have significantly less irradiation damage, demonstrated by successful quantitative high-resolution transmission electron microscopy conducted on sapphire from data acquired using an aberration-corrected field emission gun transmission electron microscopy. Quantitative analysis was conducted by iterative digital image matching. The accuracy and sensitivity of the matching process is discussed.