Volume 84, Issue 10 p. 2424-2426

Densification Behavior in Microwave-Sintered Silicon Nitride at 28 GHz

Mark I. Jones,

Mark I. Jones

Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology, Nagoya 463-8687, Japan

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Maria-Cecilia Valecillos,

Maria-Cecilia Valecillos

Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology, Nagoya 463-8687, Japan

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Kiyoshi Hirao,

Kiyoshi Hirao

Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology, Nagoya 463-8687, Japan

Member, American Ceramic Society.

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Motohiro Toriyama,

Motohiro Toriyama

Planning Office, National Institute of Advanced Industrial Science and Technology, Tokyo 100-8901, Japan

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Mark I. Jones,

Mark I. Jones

Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology, Nagoya 463-8687, Japan

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Maria-Cecilia Valecillos,

Maria-Cecilia Valecillos

Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology, Nagoya 463-8687, Japan

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Kiyoshi Hirao,

Kiyoshi Hirao

Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology, Nagoya 463-8687, Japan

Member, American Ceramic Society.

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Motohiro Toriyama,

Motohiro Toriyama

Planning Office, National Institute of Advanced Industrial Science and Technology, Tokyo 100-8901, Japan

Search for more papers by this author

First published: 20 December 2004

https://doi.org/10.1111/j.1151-2916.2001.tb01025.x

Citations: 21

D. L. Johnson—contributing editor

Supported by the STA Fellowship Program managed by the Japan Science and Technology Corp. (JST) in cooperation with the Japan International Science and Technology Exchange Center (JISTEC).

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Abstract

Si₃N₄ powders were sintered using a 28 GHz gyrotron source, with Y₂O₃, Al₂O₃, and MgO as sintering aids, in an attempt to investigate the effect of microwave radiation on densification behavior. The microwave-sintered samples were compared with identical samples produced by conventional pressureless sintering. The effect of sintering on the microstructural development and grain growth of the samples was assessed using scanning electron microscopy. Phase transformation behavior was assessed using X-ray diffractometry. In the microwave-sintered samples, densification and α→β transformation occurred at temperatures ∼200°C lower than those of the conventionally sintered samples. More importantly, at comparable stages of densification, the microstructures of the microwave-sintered and conventionally sintered samples were significantly different, with the microwave-sintered samples showing the development of elongated β grains at a much earlier stage of the α→β transformation. It was concluded that the effect of microwave radiation on sintering was not simply a decrease in sintering temperatures, but in possibly a different sintering mechanism, clearly related to localized heating within the grain-boundary phase.

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Volume84, Issue10

October 2001

Pages 2424-2426

Densification Behavior in Microwave-Sintered Silicon Nitride at 28 GHz

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Densification Behavior in Microwave-Sintered Silicon Nitride at 28 GHz

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