Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics
- Po-Hsun Ho*
Po-Hsun Ho*[email protected] (Dr. Po-Hsun Ho).Department of Materials Science and Engineering, National Taiwan University, Taipei 106, TaiwanCenter of Atomic Initiative for New Materials, National Taiwan University, Taipei 106, TaiwanMore by Po-Hsun Ho
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- Jun-Ru Chang
Jun-Ru ChangDepartment of Materials Science and Engineering, National Taiwan University, Taipei 106, TaiwanMore by Jun-Ru Chang
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- Chun-Hsiang Chen
Chun-Hsiang ChenDepartment of Physics, National Taiwan University, Taipei 106, TaiwanMore by Chun-Hsiang Chen
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- Cheng-Hung Hou
Cheng-Hung HouResearch Center for Applied Sciences, Academia Sinica, Taipei 11529, TaiwanMore by Cheng-Hung Hou
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- Chun-Hao Chiang
Chun-Hao ChiangDepartment of Materials Science and Engineering, National Taiwan University, Taipei 106, TaiwanMore by Chun-Hao Chiang
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- Min-Chuan Shih
Min-Chuan ShihDepartment of Physics, National Taiwan University, Taipei 106, TaiwanMore by Min-Chuan Shih
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- Hung-Chang Hsu
Hung-Chang HsuDepartment of Physics, National Taiwan University, Taipei 106, TaiwanMore by Hung-Chang Hsu
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- Wen-Hao Chang
Wen-Hao ChangDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanMore by Wen-Hao Chang
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- Jing-Jong Shyue
Jing-Jong ShyueResearch Center for Applied Sciences, Academia Sinica, Taipei 11529, TaiwanMore by Jing-Jong Shyue
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- Ya-Ping Chiu*
Ya-Ping Chiu*[email protected] (Prof. Ya-Ping Chiu).Department of Physics, National Taiwan University, Taipei 106, TaiwanCenter of Atomic Initiative for New Materials, National Taiwan University, Taipei 106, TaiwanMore by Ya-Ping Chiu
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- Chun-Wei Chen*
Chun-Wei Chen*[email protected] (Prof. Chun-Wei Chen).Department of Materials Science and Engineering, National Taiwan University, Taipei 106, TaiwanCenter of Atomic Initiative for New Materials, National Taiwan University, Taipei 106, TaiwanMore by Chun-Wei Chen
Abstract
Contact doping is considered crucial for reducing the contact resistance of two-dimensional (2D) transistors. However, a process for achieving robust contact doping for 2D electronics is lacking. Here, we developed a two-step doping method for effectively doping 2D materials through a defect-repairing process. The method achieves strong and hysteresis-free doping and is suitable for use with the most widely used transition-metal dichalcogenides. Through our method, we achieved a record-high sheet conductance (0.16 mS·sq–1 without gating) of monolayer MoS2 and a high mobility and carrier concentration (4.1 × 1013 cm–2). We employed our robust method for the successful contact doping of a monolayer MoS2 Au-contact device, obtaining a contact resistance as low as 1.2 kΩ·μm. Our method represents an effective means of fabricating high-performance 2D transistors.
Cited By
This article is cited by 2 publications.
- Bingjie Liu, Xiaofei Yue, Chenxu Sheng, Jiajun Chen, Chengjie Tang, Yabing Shan, Jinkun Han, Shuwen Shen, Wenxuan Wu, Lijia Li, Ye Lu, Laigui Hu, Ran Liu, Zhi-Jun Qiu, Chunxiao Cong. High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes. ACS Applied Materials & Interfaces 2024, 16 (15) , 19247-19253. https://doi.org/10.1021/acsami.4c01605
- Po-Hsun Ho, Yu-Ying Yang, Sui-An Chou, Ren-Hao Cheng, Po-Heng Pao, Chao-Ching Cheng, Iuliana Radu, Chao-Hsin Chien. High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping. Nano Letters 2023, 23 (22) , 10236-10242. https://doi.org/10.1021/acs.nanolett.3c02757