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Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

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† Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchy Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
‡ The MOE Key Laboratory of Weak-Light Nonlinear Photonics, and TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin 300457, China
§ State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
∥ University of Chinese Academy of Sciences, Beijing 100080, China
⊥ State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
# Department of Physics, South University of Science and Technology of China, Shenzhen 518005, China
*E-mail: [email protected]
*E-mail: [email protected]
*E-mail: [email protected]
Cite this: Nano Lett. 2017, 17, 2, 1065–1070
Publication Date (Web):January 16, 2017
https://doi.org/10.1021/acs.nanolett.6b04576
Copyright © 2017 American Chemical Society
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    Abstract

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    Two-dimensional materials (2DMs) are competitive candidates in replacing or supplementing conventional semiconductors owing to their atomically uniform thickness. However, current conventional micro/nanofabrication technologies realize hardly ultrashort channel and integration, especially for sub-10 nm. Meanwhile, experimental device performance associated with the scaling of dimension needs to be investigated, due to the short channel effects. Here, we show a novel and universal technological method to fabricate sub-10 nm gaps with sharp edges and steep sidewalls. The realization of sub-10 nm gaps derives from a corrosion crack along the cleavage plane of Bi2O3. By this method, ultrathin body field-effect transistors (FETs), consisting of 8.2 nm channel length, 6 nm high-k dielectric, and 0.7 nm monolayer MoS2, exhibit no obvious short channel effects. The corresponding current on/off ratio and subthreshold swing reaches to 106 and 140 mV/dec, respectively. Moreover, integrated circuits with sub-10 nm channel are capable of operating as digital inverters with high voltage gain. The results suggest our technological method can be used to fabricate the ultrashort channel nanopatterns, build the experimental groundwork for 2DMs FETs with sub-10 nm channel length and 2DMs integrated circuits, and offer new potential opportunities for large-scale device constructions and applications.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.6b04576.

    • Nanogaps of β-Bi2O3 film. Dependence of conductivity of Au film on magnetron sputtering time. Excellent uniformity of the sub-10 nm nanogaps. The gate current curves of MoS2. Characterization of multilayer MoS2 FETs (PDF)

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