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Gigahertz Integrated Graphene Ring Oscillators

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† L-NESS, Department of Physics, Politecnico di Milano, Polo di Como, Via Anzani 42, 22100 Como, Italy
‡ Department of Science and High Technology, Universitá degli Studi dell’Insubria, Via Valleggio 11, 22100 Como, Italy
§ Department of Electrical and Computer Engineering, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
⊥ Micro and Nanotechnology Lab, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
∥ Beckman Institute, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
*Address correspondence to [email protected]
Cite this: ACS Nano 2013, 7, 6, 5588–5594
Publication Date (Web):May 28, 2013
https://doi.org/10.1021/nn401933v
Copyright © 2013 American Chemical Society
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    Abstract

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    Ring oscillators (ROs) are the most important class of circuits used to evaluate the performance limits of any digital technology. However, ROs based on low-dimensional nanomaterials (e.g., 1-D nanotubes, nanowires, 2-D MoS2) have so far exhibited limited performance due to low current drive or large parasitics. Here we demonstrate integrated ROs fabricated from wafer-scale graphene grown by chemical vapor deposition. The highest oscillation frequency was 1.28 GHz, while the largest output voltage swing was 0.57 V. Both values remain limited by parasitic capacitances in the circuit rather than intrinsic properties of the graphene transistor components, suggesting further improvements are possible. The fabricated ROs are the fastest realized in any low-dimensional nanomaterial to date and also the least sensitive to fluctuations in the supply voltage. They represent the first integrated graphene oscillators of any kind and can also be used in a wide range of applications in analog electronics. As a demonstration, we also realized the first stand-alone graphene mixers that do not require external oscillators for frequency conversion. The first gigahertz multitransistor graphene integrated circuits demonstrated here pave the way for application of graphene in high-speed digital and analog circuits in which high operating speed could be traded off against power consumption.

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    Measurements and discussions on top-gate capacitance, dc characteristics of individual FETs and inverters, extensive modeling and simulations of the fabricated ROs, scaling of the oscillation frequency, detuning of the ROs, the highest frequencies and voltage swings of the fabricated ROs, higher harmonics, output bandwidth, influence of the supply voltage on the oscillation frequency, circuit diagram and output signals in the time domain of the stand-alone graphene mixers, nonlinear intermodulations in the mixers, noise margin, phase noise, Raman spectrum of monolayer graphene, contact resistance, complete circuit layout, back-gating used to shift the Dirac point, and drift of the transfer curves at large back-gate voltages. This material is available free of charge via the Internet at http://pubs.acs.org.

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