We investigate poly(methylmethacrylate) (PMMA) development processing with cold developers (4–10 °C) for its effect on resolution, resist residue, and pattern quality of sub-10 nm electron beam lithography (EBL). We find that low-temperature development results in higher EBL resolution and improved feature quality. PMMA trenches of 4–8 nm are obtained reproducibly at 30 kV using cold development. Fabrication of single-particle-width Au nanoparticle lines was performed by lift-off. We discuss key factors for formation of PMMA trenches at the sub-10 nm scale.
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